This part of IEC 63068 provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.
More Standards PDF
IEC 62153-4-2 Ed. 1.0 b:2003
$95.00 $190.00
IEC 60034-9 Ed. 4.0 b:2003
$24.00 $49.00
IEC 62237 Ed. 1.0 b:2003
$139.00 $278.00
IEC 61951-1 Ed. 2.0 b:2003
$45.00 $91.00